GaN Semiconductor Devices Market Trending News: COVID-19 Impact on Growth Opportunities

By
Zaraki Kenpachi
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Power management and technologies in the semiconductor sphere have evolved at a rapid pace in the past decade. Power management solutions are set to witness a major overhaul in the coming years, due to significant progress of the Gallium Nitride (GaN) semiconductor devices market. Gallium nitride semiconductors are expected to play a critical role in radiofrequency power, power switching, and present-day sensor applications. Moreover, companies operating in the current GaN semiconductor devices market are largely focusing on commercializing GaN semiconductor devices and increase the adoption of the cutting-edge revolutionary.

  • According to Transparency Market Research’s latest research report on the global GaN semiconductor devices market for the historical period of 2017–2018 and the forecast period of 2019–2027, the adoption of GaN semiconductor devices in the aerospace & defense sector is rapidly increasing, as GaN semiconductor devices have high breakdown voltage and rapid heat dissipation capacity. This is expected to boost the global GaN semiconductor devices market during the forecast period.
  • In terms of value, the global GaN semiconductor devices market is anticipated to reach ~US$ 4 Bn by 2027, expanding at a CAGR of 14.5% during the forecast period.

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Advancements in Technology: A Key Driver

  • There have been rapid advancements in the GaN technology, as a result of which various companies are launching new and innovative products that are cost-effective, efficient, and with better design
  • Moreover, in order to meet the rising demand for high-power and high-temperature applications, there has been increase in the usage of GaN semiconductor devices
  • These devices are widely used in radio frequency amplifiers, high-voltage applications, and LEDs, primarily due to their ability to operate at a high frequency, power density, and temperature with improved efficiency and linearity
  • Due to the aforementioned advantages, the demand for GaN semiconductor devices for use in various applications has increased. In order to meet the rising demand for GaN semiconductor devices, large players operating in the market have been utilizing economies of scale.
  • Thus, increase in the use of technologically advanced GaN semiconductor devices in various applications is anticipated to be a prominent factor driving the global GaN semiconductor devices market during the forecast period

Increasing Use of GaN FETs for Power Management in Space Applications: Latest Market Trend

  • GaN semiconductor devices have features such as high temperature resistivity, high conductivity, high oscillation frequency, and low resistance, owing to which, they are widely used in industries such as consumer electronics, automotive, and aerospace & defense
  • Wide band gap (WBG) semiconductor technologies, such as gallium nitride field effect transistors (GaN FETs), are being adopted in space applications for the purpose of power management and conversion. These devices feature extremely low gate charge, low radio data system (RDS) (ON), and high breakdown voltage, which enable power management systems to operate at high switching frequencies and deliver high efficiency.
  • Moreover, the Research Ministry of Germany and Saxon State Government have funded a new research laboratory in order to quickly industrialize the research results of GaN semiconductor devices. The European Space Agency (ESA) has acknowledged GaN as the key facilitating technology for space applications.
  • The ESA has launched an initiative called GREAT (GaN Reliability Enhancement and Technology Transfer) in order to develop new applications and improve products comprising wide band gap (WBG) semiconductor technologies. These factors are expected to drive the global GaN semiconductor devices market during the forecast period.
  • Moreover, GaN high-performance amplifiers are expected to boost competitiveness in the telecommunications industry during the forecast period

High Cost Incurred in Production of GaN Devices a Major Challenge for GaN Semiconductor Devices Market

  • One of the major restraints of the global GaN semiconductor devices market is the higher production cost of pure gallium nitride than silicon carbide, which has been a prominent semiconductor material used in high-voltage power electronics for a decade
  • Various costs involved in the production of GaN devices are cost of substrate, fabrication, packaging, support electronics, and development. Thus, high cost is one of the major challenges in the commercialization of GaN-based devices.
  • Though producing GaN in large volumes can help overcome these issues, currently, no widespread method is adopted for producing GaN in bulk, as it requires high operating pressures and temperatures, low material quality, and limited scalability.

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GaN Semiconductor Devices Market: Competition Landscape

  • Detailed profiles of providers of GaN semiconductor devices have been provided in the report to evaluate their financials, key product offerings, recent developments, and strategies
  • Key players operating in the global GaN semiconductor devices market are
    • Cree, Inc.
    • Efficient Power Conversion Corporation
    • FUJITSU
    • GaN Systems
    • NICHIA CORPORATION
    • NXP Semiconductors
    • Renesas Electronics Corporation
    • Toshiba Corporation
    • Texas Instruments Incorporated
    • Transphorm Inc.

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