Global High Resistivity Wafers Market: Snapshot
The need for high-resistivity semiconductor substrates stems from the demand for low-loss, high-performance microwave and millimeter wave components in advanced telecommunication systems. High resistivity wafers are gaining prominence in wireless chip designs to enhance the performance of a number of passive components, including inductors, capacitors, and transmitters. These wafer possess resistivity usually in the range of 40 ohm-cm to 1000 ohm-cm and are gaining wide applications in the complementary metal-oxide-semiconductor (CMOS) integration of radio frequency (RF) transceiver devices operating in the GHz frequency range by supporting advanced wafer characteristics.
These ultra-high resistivity silicon wafers are used in RF-CMOS process technologies to meet emerging performance requirements of telecommunication devices. With wireless standards of these devices moving to even higher range frequencies, high-resistivity wafers help in meeting the required inductor quality factors. The growing popularity 4G LTE and rising prominence of Wi-Fi technology are key factors expected to bolster the uptake of high resistivity silicon-on-insulator (HR-SOI). HR-SOI with ultra-high resistivity is considered to be essential for minimizing coupling through the substrates and meet various conditions for RF technology such as excellent linearity, marked breakdown voltage, and improved thermal conductivity. Constant research has been made it possible for HR-SOI in providing amazing noise isolation, better signal integrity among the substrates. Furthermore, they are found to be useful in making system-on-chip (SOC) configurations capable of integrating multiple functionalities.
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There is a rising demand for safety and security in in hospitals, hotels, offices, airports among others and this is expected to increase demand for infrared (IR) detectors and subsequently will increase demand for high resistivity wafers. Rising demand for the consumer electronics devices including smartphone, smart watches, tablets, smart TVs among others is expected to increase demand for IR detectors and subsequently will increase demand for high resistivity wafers.
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Rising transition from 2G mobile technology to 3G and 4G LTE (Long Term Evolution) technology and Wi-Fi market are expected to increase demand for high resistivity silicon-on-insulator (HR-SOI) of majority 200mm diameter wafers of reducing cost and increasing RF front-end module performance of mobile wireless devices. HR-SOI wafers enable users to use multiple LTE carriers together, providing more data speed among other facilities thus increasing its demand. Rising shift to multi-mode and multi-band functionality in mobile phones and growth of W-Fi are increasing the demand for SOI enable solutions and subsequently will increase demand for high resistivity wafers.
Soitec has launched a new high resistivity second generation wafer in radio frequency silicon-on-insulator (RF-SOI) family called eSI90 (enhanced Signal Integrity) substrate. eSI90 helps in improving a 10-decibel (dB) improvement in RF front-end modules of mobile phones for LTE technology. Rising demand of high energy particle detectors in nuclear power plants is increasing the demand for high resistivity wafers. There is a huge opportunity to use high resistivity wafer in wireless chip design, improving performance of passive electronic devices such as inductors. Opportunity to manufacturer HR-SOI of 300mm wafer diameter. One of the major restrain for high resistivity wafer is the lack of demand as the technology is still in the research and development stage. Another major restrain of high resistivity wafer is to control oxygen during manufacturing of these wafers.
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The unit of resistivity is ohm-cm. Silicon is the most widely used material to manufacturer wafer. High resistivity wafers or ultra-high resistivity silicon wafers have same resistivity throughout the wafer, acceptable axial and radial resistivity gradients and resistivity of silicon remains unchanged throughout device processing. Normal polished wafers have resistivity in the range 5 mohm-cm to 30 ohm-cm. High resistivity wafer have resistivity range from 40 ohm-cm to 1000 ohm-cm or more. High resistivity wafers are manufactured through float zone growth technology. The characteristics of high resistivity wafer depends on crystal growth and control of oxygen.
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