India GaN Semiconductor Devices Market is estimated to expand at a CAGR of 14.5%

June 24, 2021

According to Transparency Market Research’s latest research report on the global GaN semiconductor devices market for the historical period of 2017–2018 and the forecast period of 2019–2027, the adoption of GaN semiconductor devices in the aerospace & defense sector is rapidly increasing, as GaN semiconductor devices have high breakdown voltage and rapid heat dissipation capacity. This is expected to boost the global GaN semiconductor devices market during the forecast period.
In terms of value, the global GaN semiconductor devices market is anticipated to reach ~US$ 4 Bn by 2027, expanding at a CAGR of 14.5% during the forecast period

There have been rapid advancements in the GaN technology, as a result of which various companies are launching new and innovative products that are cost-effective, efficient, and with better design
Moreover, in order to meet the rising demand for high-power and high-temperature applications, there has been increase in the usage of GaN semiconductor devices
These devices are widely used in radio frequency amplifiers, high-voltage applications, and LEDs, primarily due to their ability to operate at a high frequency, power density, and temperature with improved efficiency and linearity
Due to the aforementioned advantages, the demand for GaN semiconductor devices for use in various applications has increased. In order to meet the rising demand for GaN semiconductor devices, large players operating in the market have been utilizing economies of scale.
Thus, increase in the use of technologically advanced GaN semiconductor devices in various applications is anticipated to be a prominent factor driving the global GaN semiconductor devices market during the forecast period.

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Increasing Use of GaN FETs for Power Management in Space Applications: Latest Market Trend

GaN semiconductor devices have features such as high temperature resistivity, high conductivity, high oscillation frequency, and low resistance, owing to which, they are widely used in industries such as consumer electronics, automotive, and aerospace & defense
Wide band gap (WBG) semiconductor technologies, such as gallium nitride field effect transistors (GaN FETs), are being adopted in space applications for the purpose of power management and conversion. These devices feature extremely low gate charge, low radio data system (RDS) (ON), and high breakdown voltage, which enable power management systems to operate at high switching frequencies and deliver high efficiency.
Moreover, the Research Ministry of Germany and Saxon State Government have funded a new research laboratory in order to quickly industrialize the research results of GaN semiconductor devices. The European Space Agency (ESA) has acknowledged GaN as the key facilitating technology for space applications.
The ESA has launched an initiative called GREAT (GaN Reliability Enhancement and Technology Transfer) in order to develop new applications and improve products comprising wide band gap (WBG) semiconductor technologies. These factors are expected to drive the global GaN semiconductor devices market during the forecast period.
Moreover, GaN high-performance amplifiers are expected to boost competitiveness in the telecommunications industry during the forecast period

High Cost Incurred in Production of GaN Devices a Major Challenge for GaN Semiconductor Devices Market

One of the major restraints of the global GaN semiconductor devices market is the higher production cost of pure gallium nitride than silicon carbide, which has been a prominent semiconductor material used in high-voltage power electronics for a decade
Various costs involved in the production of GaN devices are cost of substrate, fabrication, packaging, support electronics, and development. Thus, high cost is one of the major challenges in the commercialization of GaN-based devices.
Though producing GaN in large volumes can help overcome these issues, currently, no widespread method is adopted for producing GaN in bulk, as it requires high operating pressures and temperatures, low material quality, and limited scalability.

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GaN Semiconductor Devices Market: Competition Landscape

Detailed profiles of providers of GaN semiconductor devices have been provided in the report to evaluate their financials, key product offerings, recent developments, and strategies
Key players operating in the global GaN semiconductor devices market are
- Cree, Inc.
- Efficient Power Conversion Corporation
- FUJITSU
- GaN Systems
- NICHIA CORPORATION
- NXP Semiconductors
- Renesas Electronics Corporation
- Toshiba Corporation
- Texas Instruments Incorporated
- Transphorm Inc.