RF semiconductor devices are used for cellular and mobile wireless infrastructures. The RF power semiconductor devices are employed in various applications such as marine, air traffic control system, and in military radar. Multiple manufacturers are primarily focusing on providing RF power semiconductor devices with various advancements.
Rapidly increasing demand for smartphones, growing usage of long-term evolution (LTE), and 5G are some primary factors driving the global RF power semiconductor market. The market for smartphones is rapidly augmenting owing to the increase in utilization of internet and interest toward social media. The network technology worldwide, hence the utilization of long-term evolution (LTE) is rapidly increasing. Increase in usage of RF power devices in various lighting applications, is a primary factor driving the global RF power semiconductor market. Recent technological advancements such as decrease in RF power level and rise in power density up to 1000 Watt per single transistor device. RF plasma lighting technology works without any additional electrodes in a bulb and has a long operating lifespan. Compound semiconductors are the latest trend in the RF power semiconductor market. Rising cost with performance improvement and reduced price margin, owing to the highly fragmented market. These factors are likely to hamper the market in future.
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The global RF power semiconductor market can be segmented based on product type, material type, frequency range, application, and geography. In terms of product type, the global market can be divided into RF power amplifiers, RF duplexers, RF passives, RF switches, and other RF devices. The RF power amplifiers segment is expected to expand at significant pace owing to the rise in adoption of RF power amplifier to boost the power of a signal and rise in demand for ultrasound applications. Based on material type, the global RF power semiconductor market can be divide into silicon, gallium arsenide, silicon carbide, silicon germanium, indium phosphide, and gallium nitride. The silicon material segment is expected to expand at a rapid pace due to the abundance of silicon in nature and it is a fundamentally maintainable source for the raw materials. In terms of frequency range, the global RF power semiconductor market can be segregated into <10 GHz, 10 GHz-20 GHz, 20 GHz-30 GHz, 30 GHz-60 GHz, and 60+ GHz. In terms of application, the global RF power semiconductor market can be categorized into consumer, aerospace & defense, medical, automotive, telecommunication & data communication, and other. The usage of RF power semiconductors in the aerospace & defense segment is expected to rise for applications in radar systems and avionics. Defense equipment manufacturers are increasingly using RF power devices. Growth in defense equipment across the globe due to the increase in investment in the defense sector is expected to boost the global RF power semiconductor market.
Geographically, the global RF power semiconductor market can be segmented into North America, Europe, Asia Pacific, Middle East & Africa, and South America. The market in Asia Pacific is expected to expand at a considerable pace, followed by North America, owing to the growing number of smartphone users and an established electronics industry. The market in North America is anticipated to grow at a steady pace due to the presence of a large number of manufacturers in the region.
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Key players operating in the global RF power semiconductor market include Infineon Technologies AG, Qorvo, Inc., NXP Semiconductors N.V., Toshiba Corporation, M/A-COM Technology Solutions Holdings, Inc., Broadcom Limited, Mitsubishi Electric Corporation, Integra Technologies, Murata Manufacturing, and Skyworks Solutions Inc.
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