Globally, the combined market for IGBT (Insulated Gate Bipolar Transistor) and super junction MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) was valued at USD 4,776.2 million in 2012 and is likely to grow at a CAGR of 11.6% during the period 2013 – 2019. The combined market for IGBT and super junction MOSFET is expected to reach USD 10,100.0 million by 2019. Increasing demand for energy efficiency, environment compatibility, flexibility, and cost and size reduction are the emerging trends across the semiconductor industry and have greatly influenced the trends in power semiconductor market. IGBT and super junction MOSFETs offer significant improvement in efficiency and better switching frequency. Further, IGBT are cost effective while super junction MOSFETs offer highly compact design. These factors are together driving the growth of the market for IGBTs and super junction MOSFETs. Asia Pacific is expected to emerge as the fastest growing regional market, followed by Europe, during the forecast period 2013 to 2019. This growth in Asia Pacific region will be led by China followed by Japan. The growing renewable energy sector, heavy investment in high-speed rail and rising demand for electric vehicles are the key factors propelling growth of the IGBT and super junction MOSFET market in the region.
Want to know the obstructions to your company’s growth in future? Request a brochure @ https://www.transparencymarketresearch.com/sample/sample.php?flag=S&rep_id=2363
Both IGBT and super junction MOSFETs come in discrete as well as module forms. Growth of the discrete market is driven by increasing demand for consumer electronic products while modules have found significant uptake in photovoltaic inverters, and electric and hybrid electric vehicles (EV/HEV). Key application areas for IGBT and super junction MOSFETs include uninterrupted power supply (UPS), wind turbines, photovoltaic (PV) inverter, rail traction, consumer applications, electric vehicles/hybrid electric vehicles (EV/HEV), motor drives, industrial applications, converters, adapters and chargers, lighting, and others (servers, telecom and networking devices, etc.).. Super junction MOSFETs have been emerging as a more suitable power semiconductor for, converters, adapters and chargers, lighting, and other (servers, telecom and networking devices, etc.) application areas and are expected to find higher adoption in these segments as compared to IGBT over the coming years. Among all application segments for IGBT and super junction MOSFETs, industrial application was the single largest segment by revenue in 2012. The industrial application sector has seen high demand for energy efficient power semiconductor products in recent years and this has propelled the uptake of IGBT in this segment.
Key players in this market include Mitsubishi Electric Corporation, Fairchild Semiconductor International, Inc., Infineon Technologies AG, STMicroelectronics N.V., ABB Ltd., Hitachi Power Semiconductor Device, Ltd., Toshiba Corporation, Vishay Intertechnology, Inc., Fuji Electric Co. Ltd., and Semikron, Inc., among others. Mitsubishi Electric Corporation was as the market leader for IGBT in 2012. The company had significant sales in the Asian market, particularly in China and Japan. Infineon Technologies AG was the market leader in 2012 for super junction MOSFETs.
IGBT and Super Junction MOSFET Market to Gain Impetus Owing to Rising Demand from Automobile Industry
The growing demand for eco-friendly, energy efficient, and flexible and compact size transistor sets is a prime factor augmenting growth of the global IGBT and super junction MOSFET market. This product offers critical improvement in proficiency and better exchanging recurrence. Further, IGBT are practical while super junction MOSFETs offer exceptionally smaller plan. These variables are together driving the development of the market in the foreseeable future.
Rising demand for energy effectiveness and expanded spotlight on environmentally friendly power is foreseen to be the key main impetus for the IGBT and super junction MOSFET market. Flood in the demand of Electrical transmission effectiveness has brought about a need of upgraded power hardware plans, driving the overall market. Green IT activities across different associations to control power misfortunes and secure the climate are projected to fuel the market over the coming years.
Looking for exclusive market insights from business experts? Request a Custom Report
The rapidly expanding renewable energy sector, coupled with the rising demand for electric vehicles are also adding boost to the overall growth of the market. On the other side, the presence of other compound semiconductor alternatives such as gallium-nitride or GaN, silicon carbode, and others may draw away revenues, thereby creating major barriers for the growth of the market in the coming years.
Demographically, Asia-Pacific is foreseen to stay the region with the highest revenue for IGBT super junction MOSFET market in the coming years. The presence of huge plants in nations, for example, Japan, India and China is probably going to be good for the sun based area. Improvements in car and PV inverter creation in the Asia Pacific are additionally projected to fuel reception later on. Also, rapid train network extension is assessed to bring about an appeal for power semiconductors. Expanded breeze turbine establishment in the U.S. is probably going to decidedly affect North American market. Engine drives, HEV, and modern applications are projected to be the vital sections in this regional market.
Read Our Trending Press Release Below: https://www.prnewswire.com/news-releases/manufacturers-of-unmanned-surface-vessels-leverage-collision-avoidance-sensor-market-valuation-to-touch-mark-of-us-12-bn-by-2027-tmr-301178838.html
